2SK3380 silicon n channel mos fet high speed switching ade-208-806 (z) 1st.edition. june 1999 features ? low on-resistance r ds =1.26 w typ. (v gs = 10 v , i d = 150 ma) r ds = 2.8 w typ. (v gs = 4 v , i d = 50 ma) ? 4 v gate drive device. outline 1. source 2. drain 3. gate spak d s g 1 2 3
2SK3380 2 absolute maximum ratings (ta = 25 c) note: 1.pw 10 m s, duty cycle 1% electrical characteristics (ta = 25 c) note: 2.pulse test see characteristics curves of 2sk3288 item symbol ratings unit drain to source voltage v dss 30 v gate to source voltage v gss 20 v drain current i d 300 ma drain peak current i d(pulse) note1 1.2 a body-drain diode reverse drain current i dr 300 ma channel dissipation pch 300 mw channel temperature tch 150 c storage temperature tstg C55 to +150 c item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 30 v i d = 100 m a, v gs = 0 gate to source breakdown voltage v (br)gss 20 v i g = 100 m a, v ds = 0 gate to source leak current i gss 5 m av gs = 16 v, v ds = 0 zero gate voltege drain current i dss 1 m av ds = 30 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.3 2.3 v i d = 10 m a, v ds = 5 v static drain to source on state resistance r ds(on) 1.261.44 w i d = 150 ma,v gs = 10 v note 2 r ds(on) 2.83.44 w i d = 50 ma,v gs = 4 v note 2 forward transfer admittance |y fs | 145 220 ms i d = 150 ma, v ds =10 v note 2 input capacitance ciss 6 pf v ds = 10 v output capacitance coss 18 pf v gs = 0 reverse transfer capacitance crss 2 pf f = 1 mhz turn-on delay time t d(on) 200nsi d = 150 ma, v gs = 10 v rise time t r 600nsr l = 66.6 w turn-off delay time t d(off) 1100ns fall time t f 1100ns
2SK3380 3 main characteristics package dimensions unit: mm 0.1 1.0 10 50 400 300 200 100 0 50 100 150 200 5 1.0 0.1 0.01 0.001 dc operation drain to source voltage v (v) ds maximum safe operation area channel dissipation pch (mw) ambient temperature ta ( ?) power vs. temperature derating drain current i (a) d ta=25 ? 1ms 100 ? pw=10ms 10 ? operation in this area is limited by rds(on) 0.0005 0.002 0.005 0.02 0.05 0.2 0.5 2 0.05 0.2 0.5 2 5 20 4.2 max 0.6 max 0.45 ?0.1 1.27 1.27 2.54 2.2 max 0.4 ?0.1 0.6 1.8 max 14.5 min 3.2 max hitachi code eiaj jedec spak
2SK3380 4 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachis or any third partys patent, copy- right, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third partys rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have re- ceived the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, con- tact hitachis sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or fail- ure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equip- ment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachis sales office for any questions regarding this document or hitachi semiconductor prod- ucts. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ?hitachi, ltd., 1998. all rights reserved. printed in japan. hitachi asia pte. ltd. 16 collyer quay #20-00 hitachi tower singapore 049318 tel: 535-2100 fax: 535-1533 url northamerica : http:semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia (singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm asia (taiwan) : http://www.hitachi.com.tw/e/product/sicd_frame.htm asia (hongkong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. taipei branch office 3f, hung kuo building. no.167, tun-hwa north road, taipei (105) tel: <886> (2) 2718-3666 fax: <886> (2) 2718-8180 hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road, tsim sha tsui, kowloon, hong kong tel: <852> (2) 735 9218 fax: <852> (2) 730 0281 telex: 40815 hitec hx hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 778322 hitachi europe gmbh electronic components group dornacher stra? 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to:
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